Li, MoLee, Seokhyeong2024-02-122024-02-122024-02-122023Lee_washington_0250E_26493.pdfhttp://hdl.handle.net/1773/51161Thesis (Ph.D.)--University of Washington, 2023Infrared (IR) technologies have boundless applications spanning from fundamental science, industrial engineering to bio-medical science, climate and environment science. The technology has been developed with quantum physics, solid state physics, and semiconductor engineering, with deeper understanding of interaction between light and matter especially via charged particles (also quasi-particles). Heterogeneous integration of different semiconductor materials adds more functionalities to optoelectronic devices, where properties of optical material can be modulated by engineering the nearby materials. In two-dimensional materials, the effects from perturbation from the near environment can be large enough to change optical properties of the material. In addition, the vertical confinement of two-dimensional material exhibits enhanced light-matter interaction with quantum confinement effect and reduced electron screening, becoming great candidates for optoelectronic devices. Black Phosphorus (bP) is thermodynamically stable two-dimensional material with direct bandgap spanning broad infrared regime. The main two chapters utilize bP for IR active material. First, the optical properties, absorption coefficient can be modulated by electric field and electrostatic doping using Field Effect Transistor (FET) geometry, governed by physical phenomena of Burstein-Moss effect and Quantum Confined Franz Keldysh effect. The modulation of absorption coefficient of bP and its integrability on Silicon chip enables on-chip optical modulator. Second chapter where bP is utilized offers additional functionality, non-volatile programmability by engineering dielectric layer of FET geometry. The non-volatile various values of responsivities of bP IR sensors, when combined in an array, serve as in-sensor computing processor where simple neural network computation is possible in sensor using physical/analog computing, to demonstrate edge detection and hand written digit recognition with 92 \% accuracy. Finally, III-V compound semiconductor system is considered and engineered to capture 1-2 $\mu$m of broad near-IR photons with exceptional sensitivity and photoelectric gain. Here, heterojunction phototransistor (HPT) is conceived and optimized to not only detect IR light but also drive an LED to extend its application to light-weight Night Vision Intensifier, exhibiting unprecedented IR photon to Red photon upconversion.application/pdfen-USnoneBlack PhosphorusEdge computingHeterojunction PhototransistorInfrared SensorNight visionEngineeringElectrical engineeringElectrical and computer engineeringThesis