Choi, SeungkeunRaza, Moosa2022-09-232022-09-232022-09-232022Raza_washington_0250O_24847.pdfhttp://hdl.handle.net/1773/49340Thesis (Master's)--University of Washington, 2022Over the years a resistive random-access memory (ReRAM) has received great attention due to its simple structure, CMOS compatible fabrication process, low-power consumption. Among other attracting memory characteristics, multilevel switching is considered as a very important feature since a single memory cell can store more than one bit of information, thereby increasing memory density. While molybdenum trioxide (MoO3) has been widely used for many optoelectronic devices as a charge transport layer, it has not been extensively investigated as a resistive switching layer.In this research, I have used MoO3 as a switching layer and demonstrated a multilevel resistive switching by controlling the compliance current. In a novel lateral device architecture, I have also demonstrated a self-compliance resistive switching behavior. However, devices need to be further optimized to reduce the operating voltage in a lateral device architecture.application/pdfen-USnoneElectrical engineeringElectrical engineeringThesis