Multiscale Simulation of Phase Change Memory

dc.contributor.advisorAnantram, Manjerien_US
dc.contributor.authorLiu, Jieen_US
dc.date.accessioned2014-02-24T18:28:36Z
dc.date.available2014-02-24T18:28:36Z
dc.date.issued2014-02-24
dc.date.submitted2013en_US
dc.descriptionThesis (Ph.D.)--University of Washington, 2013en_US
dc.description.abstractThis PhD thesis investigates the phase change material (PCM) based memory technology using multiscale theoretical modeling and numerical simulation. The multiscale analysis consists of three hierarchical parts: (i) the macroscopic simulation (about tens to hundres of nm and beyond), which studies the electro-thermal transport by using analytic derivation and time-dependent finite element method (TD-FEM); (ii) the mesoscopic simulation (about 1 to 10 nm), which investigates the electron transport properties by using the non-equilibrium Green's function (NEGF) method; and (iii) the microscopic simulation (about 0.1 to 1 nm), which studies the electronic structure, amorphization and crystallization processes by using density functional theory (DFT) and ab-initio molecular dynamics (AIMD).en_US
dc.embargo.termsNo embargoen_US
dc.format.mimetypeapplication/pdfen_US
dc.identifier.otherLiu_washington_0250E_12614.pdfen_US
dc.identifier.urihttp://hdl.handle.net/1773/25134
dc.language.isoen_USen_US
dc.rightsCopyright is held by the individual authors.en_US
dc.subjectelectron transport; electro-thermal transport; multiscale simulation; phase change memory (PCM); thermal boundary resistance (TBR); time dependent finite element method (TD-FEM)en_US
dc.subject.otherEngineeringen_US
dc.subject.otherelectrical engineeringen_US
dc.titleMultiscale Simulation of Phase Change Memoryen_US
dc.typeThesisen_US

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