Multiscale Simulation of Phase Change Memory
| dc.contributor.advisor | Anantram, Manjeri | en_US |
| dc.contributor.author | Liu, Jie | en_US |
| dc.date.accessioned | 2014-02-24T18:28:36Z | |
| dc.date.available | 2014-02-24T18:28:36Z | |
| dc.date.issued | 2014-02-24 | |
| dc.date.submitted | 2013 | en_US |
| dc.description | Thesis (Ph.D.)--University of Washington, 2013 | en_US |
| dc.description.abstract | This PhD thesis investigates the phase change material (PCM) based memory technology using multiscale theoretical modeling and numerical simulation. The multiscale analysis consists of three hierarchical parts: (i) the macroscopic simulation (about tens to hundres of nm and beyond), which studies the electro-thermal transport by using analytic derivation and time-dependent finite element method (TD-FEM); (ii) the mesoscopic simulation (about 1 to 10 nm), which investigates the electron transport properties by using the non-equilibrium Green's function (NEGF) method; and (iii) the microscopic simulation (about 0.1 to 1 nm), which studies the electronic structure, amorphization and crystallization processes by using density functional theory (DFT) and ab-initio molecular dynamics (AIMD). | en_US |
| dc.embargo.terms | No embargo | en_US |
| dc.format.mimetype | application/pdf | en_US |
| dc.identifier.other | Liu_washington_0250E_12614.pdf | en_US |
| dc.identifier.uri | http://hdl.handle.net/1773/25134 | |
| dc.language.iso | en_US | en_US |
| dc.rights | Copyright is held by the individual authors. | en_US |
| dc.subject | electron transport; electro-thermal transport; multiscale simulation; phase change memory (PCM); thermal boundary resistance (TBR); time dependent finite element method (TD-FEM) | en_US |
| dc.subject.other | Engineering | en_US |
| dc.subject.other | electrical engineering | en_US |
| dc.title | Multiscale Simulation of Phase Change Memory | en_US |
| dc.type | Thesis | en_US |
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