A Prototype System and Circuits for the Development of an Implantable H-bridge Stimulator ASIC in a Bulk CMOS Process

Abstract

The opportunity to introduce nanometer sized circuits and systems into the body to treat or cure mental disorders, physical injuries, and genetic disabilities has put us at the forefront of a burgeoning industry. Implantable stimulators have the potential to save the lives, or drastically improve the quality of life, of millions of patients that currently are subject to disorders for which there are few, insufficient, or ineffective treatment options. However, much work must be done to reduce the size, cost, and power demands of stimulator SoCs, whilst also extending the voltage range over which the stimulator regulates the flow of charge through the body. Stimulators today are often manufactured in a costly, specialized process, which precludes the addition of the supporting and control circuitry onto just a single chip. This work seeks to develop an implantable stimulator ASIC that is manufactured in a standard, low voltage, bulk CMOS process, which achieves a voltage compliance of approximately ±12 V.