Characterization of Interconnects for Perovskite Solar Modules

Abstract

Electrical characterization of interconnects for solar modules allows for accurate resistive loss assessment. Specifically, for thin-film perovskite solar modules, it is crucial to assess the resistive losses such as contact resistance and contact resistivity where the top and bottom electrodes meet. To overcome the difficulties in commercializing perovskite thin-film devices, it is pivotal to improve upon device fabrication and characterization procedures. Using a four-point probe system, multiple aspects of electrical characterization can be carried out with simple test structures resembling solar modules. Previously, this probe system has been used to characterize sheet resistance of semiconductors and resistance of the metal contacts, but less often has been used in the field of thin-film photovoltaics. Critically, the P2 interconnection where the cells in a module are serially connected has the potential to be further optimized to lessen resistive losses. In this work, specially constructed test structures resembling perovskite thin-film solar modules with P2 interconnects are electrically characterized utilizing a four-probe system and a transition line method.