Integrated Morphology, Interfacial, and Device Engineering towards High-Performance Perovskite Solar Cells
| dc.contributor.advisor | Jen, Alex K.-Y. | |
| dc.contributor.author | Liang, Po-Wei | |
| dc.date.accessioned | 2018-01-20T01:02:28Z | |
| dc.date.issued | 2018-01-20 | |
| dc.date.submitted | 2017-09 | |
| dc.description | Thesis (Ph.D.)--University of Washington, 2017-09 | |
| dc.description.abstract | As a promising renewable energy technology, perovskite solar cells (PVSCs) have made a tremendous progress and received significant attention in recent years, due to the low-cost solution process fabrication, superior charge carrier transporting ability, and decent device performance. In this dissertation, the device performance of PVSCs is enhanced through integrated approaches, such like perovskite thin-film morphology engineering, interface modification of the contact between perovskite and fullerene derivatives layers, and new device architectures. Chapter 1 and 2 briefly overview the current status and the operation mechanism of PVSCs. Chapter 3 demonstrates the importance of the perovskite morphology to the PVSCs performance and the approach of fabricating homogeneous perovskite film. By incorporating Cl- anions, the morphology for both pure I and mixed I-Br perovskite become continuous, resulting in an improved device performance. In chapter 4, another methodology to manipulate the perovskite morphology and crystallinity is proposed. An additive, DIO (1, 8-Diiodooctane), was carefully chosen to manipulate the perovskite morphology due to its capability to chelate Pb2+ cations. As a result, the increase of precursor solubility and the change of the perovskite crystal growth path generate high-quality perovskite film and decent device performance. Chapter 5 presents an interface charge redistribution between the perovskite active layer and fullerene derivatives, like C60, PCBM, and ICBA. This interesting finding gives us a deeper understating when we try to choose a suitable charge transporting material for high-performance PVSCs. In chapter 6, a device fabrication process is employed to enhance the charge collection efficiency for fullerene layer and passivate the defect states at low bandgap perovskite surface and boundary. | |
| dc.embargo.lift | 2022-12-25T01:02:28Z | |
| dc.embargo.terms | Restrict to UW for 5 years -- then make Open Access | |
| dc.format.mimetype | application/pdf | |
| dc.identifier.other | Liang_washington_0250E_17958.pdf | |
| dc.identifier.uri | http://hdl.handle.net/1773/40927 | |
| dc.language.iso | en_US | |
| dc.rights | none | |
| dc.subject | perovskite | |
| dc.subject | solar cells | |
| dc.subject | thin film | |
| dc.subject | Materials Science | |
| dc.subject.other | Materials science and engineering | |
| dc.title | Integrated Morphology, Interfacial, and Device Engineering towards High-Performance Perovskite Solar Cells | |
| dc.type | Thesis |
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