CMOS RF Energy Harvester IC Development

Abstract

This thesis details the design, simulation, and optimization of a Radio Frequency Energy Harvester (RF-EH) utilizing a 180nm Complementary Metal-Oxide Semiconductor (CMOS) process. The device operates at 2.4 GHz ISM band, converting ambient RF energy into DC (Direct Current) power, ideal for low-energy wireless devices. Key features include a rectifier circuit, a 180-degree phase shifter, and a charge pump voltage multiplier. With an input power of 0 dBm, the system achieves an 18.11% efficiency, using a 70kΩ load and five CP stages. The efficiency peaks at 32.11% at 10 dBm input. This foundational work paves the way for future research targeting enhanced efficiency and optimizing circuit design for practical applications.