Characterization of Nafion-based Resistive Switching Devices

Abstract

The development of computers in the modern era has escalated the race towards the development of powerful and efficient memory devices. By using advanced miniaturization techniques and new materials, we have been able to dramatically reduce the size of the memory devices while increasing the storage capacity and computing performance. However, we are reaching a point of slower growth in the computing performance of MOSFET-based nonvolatile memory devices. It becomes increasingly difficult to further decrease the size of memory devices. Hence, the next generation memory technology must have the following features to meet the high computing performance in the era of artificial intelligence: low-power consumption, fast switching, non-volatile, high-density fabrication. Resistive Random-Access Memory Devices (ReRAM) meets all those requirements; hence, is considered as one of the promising candidates for the next generation memory technologies. In this research, a ReRAM device with Nafion as a switching layer was fabricated. To characterize the resistive switching performance, Nafion was annealed at three different temperatures: 30°C, 60°C, and 90°C. In order to study the effect of different electrode, we used two different bottom electrodes (Au and Cu) and Al as a top electrode. The devices with Cu as a bottom electrode exhibited good resistive switching properties while the device with Au as a bottom electrode showed little or negligible switching performance. We found that the performance of switching was best when Nafion was annealed at 60°C. However, the experiment shows a wide variation of device performance even in the same substrate, indicating the importance of uniform film thickness and quality of Nafion.