Multilevel Resistive Switching in a Metal Oxide Semiconductor based on MoO3

Abstract

Over the years a resistive random-access memory (ReRAM) has received great attention due to its simple structure, CMOS compatible fabrication process, low-power consumption. Among other attracting memory characteristics, multilevel switching is considered as a very important feature since a single memory cell can store more than one bit of information, thereby increasing memory density. While molybdenum trioxide (MoO3) has been widely used for many optoelectronic devices as a charge transport layer, it has not been extensively investigated as a resistive switching layer.In this research, I have used MoO3 as a switching layer and demonstrated a multilevel resistive switching by controlling the compliance current. In a novel lateral device architecture, I have also demonstrated a self-compliance resistive switching behavior. However, devices need to be further optimized to reduce the operating voltage in a lateral device architecture.